Invention Grant
- Patent Title: Bulk acoustic wave structure and bulk acoustic wave device
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Application No.: US17692132Application Date: 2022-03-10
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Publication No.: US11646712B2Publication Date: 2023-05-09
- Inventor: Tsyr Shyang Liou
- Applicant: RichWave Technology Corp.
- Applicant Address: TW Taipei
- Assignee: RichWave Technology Corp.
- Current Assignee: RichWave Technology Corp.
- Current Assignee Address: TW Taipei
- Agency: JCIPRNET
- Priority: TW 7131208 2018.09.05
- The original application number of the division: US16231621 2018.12.24
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/13

Abstract:
A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.
Public/Granted literature
- US20220200562A1 BULK ACOUSTIC WAVE STRUCTURE AND BULK ACOUSTIC WAVE DEVICE Public/Granted day:2022-06-23
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