Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17560671Application Date: 2021-12-23
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Publication No.: US11646731B2Publication Date: 2023-05-09
- Inventor: Issei Kashima , Atsushi Tsuda
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP 2021000625 2021.01.06
- Main IPC: H03K17/22
- IPC: H03K17/22 ; H03K5/24 ; H03K17/60 ; H03K17/687

Abstract:
To provide a technique for detecting a low voltage of a power-on reset circuit. A semiconductor device has a power-on reset circuit including: a first bipolar transistor; a second bipolar transistor formed by connecting a plurality of bipolar transistors in parallel; a detection-voltage adjusting resistance element; a temperature-characteristic adjusting resistance element; a current adjusting resistance element; and a comparator.
Public/Granted literature
- US20220216866A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-07-07
Information query
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