A method may include forming a bottom electrode in an interlayer dielectric, depositing a liner on top of the bottom electrode, depositing a phase change material layer on top of the liner, wherein a top surface of the liner is in direct contact with a bottom surface of the phase change material layer, and depositing a barrier on top of the phase change material layer, wherein a top surface of the phase change material layer is in direct contact with a bottom surface of the barrier. The barrier may be made of doped phase change material. The forming of the bottom electrode may further include forming a via in the interlayer dielectric, depositing an outer layer along a bottom and a sidewall of the via, depositing a middle layer on top of the outer layer, and depositing an inner layer on top of the middle layer.