Invention Grant
- Patent Title: Transition metal-dichalcogenide thin film and manufacturing method therefor
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Application No.: US16874802Application Date: 2020-05-15
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Publication No.: US11649545B2Publication Date: 2023-05-16
- Inventor: Tae Joo Park , Dae Hyun Kim , Daewoong Kim , Tae Jun Seok , Hyunsoo Jin
- Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Applicant Address: KR Ansan-Si
- Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Current Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Current Assignee Address: KR Ansan-Si
- Agency: Finch & Maloney PLLC
- Priority: KR 20170170951 2017.12.13 KR 20180147152 2018.11.26
- Main IPC: C23C16/30
- IPC: C23C16/30 ; H01L21/02
Abstract:
A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.
Public/Granted literature
- US20200277700A1 TRANSITION METAL-DICHALCOGENIDE THIN FILM AND MANUFACTURING METHOD THEREFOR Public/Granted day:2020-09-03
Information query
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