Invention Grant
- Patent Title: Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film
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Application No.: US17204758Application Date: 2021-03-17
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Publication No.: US11651963B2Publication Date: 2023-05-16
- Inventor: Ishtak Karim , Pulkit Agarwal , Joseph R. Abel , Purushottam Kumar , Adrien Lavoie
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- The original application number of the division: US15974172 2018.05.08
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/02 ; H01L21/027
Abstract:
A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.
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