Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17345581Application Date: 2021-06-11
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Publication No.: US11652016B2Publication Date: 2023-05-16
- Inventor: Mari Saji , Masahiro Shibata , Atsushi Kurokawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP 2020103785 2020.06.16
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L23/48 ; H01L23/00 ; H01L29/737 ; H01L29/205 ; H01L29/06 ; H01L29/417

Abstract:
A first layer conductor film is connected to an operation electrode through an opening in a first layer interlayer insulating film. An opening in a second layer interlayer insulating film is encompassed by the first layer conductor film in plan view. A second layer conductor film is connected to the first layer conductor film through the opening in a second layer interlayer insulating film. The average, along a first direction, of distances in a second direction, which is perpendicular to the first direction, from the opening in the first layer interlayer insulating film to the side surface of the opening in the second layer interlayer insulating film is greater than or equal to a distance in a height direction from an upper opening plane of the opening in the first layer interlayer insulating film to a lower opening plane of the opening in the second layer interlayer insulating film.
Public/Granted literature
- US20210391233A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-16
Information query
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