Invention Grant
- Patent Title: Semiconductor device, manufacturing method thereof, and electronic device including the device
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Application No.: US17261862Application Date: 2018-10-31
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Publication No.: US11652103B2Publication Date: 2023-05-16
- Inventor: Huilong Zhu
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN 1811265733.2 2018.10.26
- International Application: PCT/CN2018/113049 2018.10.31
- International Announcement: WO2020/082405A 2020.04.30
- Date entered country: 2021-01-20
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/04 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/786 ; H01L21/02 ; H01L21/285 ; H01L21/8238 ; H01L29/66 ; H01L29/45

Abstract:
The present disclosure provides a semiconductor device, a manufacturing method thereof, and an electronic device including the semiconductor device. According to an embodiment of the present disclosure, the semiconductor device may comprise: a substrate; a first device and a second device that are sequentially stacked on the substrate. Each of the first device and the second device comprises: a first source/drain layer, a channel layer, and a second source layer that are sequentially stacked from bottom to top, and a gate stack around at least a part of an outer periphery of the channel layer, wherein sidewalls of the respective channel layers of the first device and the second device extend at least partially along different crystal planes or crystal plane families.
Public/Granted literature
- US20210296316A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE DEVICE Public/Granted day:2021-09-23
Information query
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