Invention Grant
- Patent Title: Systems and methods for an inductor structure having an unconventional turn-ratio in integrated circuits
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Application No.: US16749531Application Date: 2020-01-22
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Publication No.: US11652135B1Publication Date: 2023-05-16
- Inventor: Huy Thong Nguyen , Poh Boon Leong , Juan Xie
- Applicant: Marvell International Ltd.
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- The original application number of the division: US15469355 2017.03.24
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01F27/29 ; H01F41/04 ; H01F27/28 ; H03H7/42 ; H01L21/66 ; H01L23/66 ; H01L21/3205 ; H03H1/00

Abstract:
Embodiments described herein provide circuitry employing one or more inductors having an unconventional turn-ratio. The circuitry includes a primary inductor having a first length located on a first layer of an integrated circuit (IC). The circuitry further includes a secondary inductor having a second length located on a second layer of the IC different from the first layer, whereby the second length is greater than the first length, with a ratio between the first and the second lengths corresponding to a non-integer turn-ratio.
Information query
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