Invention Grant
- Patent Title: Photoresist contact patterning of quantum dot films
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Application No.: US17474332Application Date: 2021-09-14
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Publication No.: US11652187B2Publication Date: 2023-05-16
- Inventor: Seok Kim , Moonsub Shim , Jun Kyu Park , Hohyun Keum , Yiran Jiang
- Applicant: The Board of Trustees of the University of Illinois
- Applicant Address: US IL Urbana
- Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Current Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Current Assignee Address: US IL Urbana
- Agency: Crowell & Moring LLP
- The original application number of the division: US16572861 2019.09.17
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/50

Abstract:
The present disclosure describes one or more embodiment of a method for creating a patterned quantum dot layer. The method includes bringing a patterning stamp in contact with a layer of quantum dots disposed on a substrate, the patterning stamp comprising a patterned photoresist layer disposed on an elastomer layer, such that a portion of the quantum dots in contact with the patterned photoresist layer adheres to the patterning stamp, the portion of the quantum dots being adhered quantum dots. The method also includes peeling the patterning stamp from the substrate with a peeling speed larger than a pre-determined peeling speed to remove the adhered quantum dots from the substrate. A remaining portion of the quantum dots forms a patterned quantum dot layer on the substrate.
Public/Granted literature
- US20210408325A1 PHOTORESIST CONTACT PATTERNING OF QUANTUM DOT FILMS Public/Granted day:2021-12-30
Information query
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