A semiconductor device is disclosed. The semiconductor device includes a fin-based structure formed on a substrate. The semiconductor device includes a plurality of first nanosheets, vertically spaced apart from one another, that are formed on the substrate. The semiconductor device includes a first source/drain (S/D) region electrically coupled to a first end of the fin-based structure. The semiconductor device includes a second S/D region electrically coupled to both of a second end of the fin-based structure and a first end of the plurality of first nanosheets. The semiconductor device includes a third S/D region electrically coupled to a second end of the plurality of first nanosheets. The fin-based structure has a first crystal lattice direction and the plurality of first nano sheets have a second crystal lattice direction, which is different from the first crystal lattice direction.