Invention Grant
- Patent Title: Memory cell pillar including source junction plug
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Application No.: US16725139Application Date: 2019-12-23
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Publication No.: US11653494B2Publication Date: 2023-05-16
- Inventor: Fatma Arzum Simsek-Ege , Krishna K. Parat , Luan C. Tran , Meng-Wei Kuo , Yushi Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/11524
- IPC: H01L27/11524 ; H01L27/1157 ; H01L27/11582 ; H01L27/11556 ; H01L21/822 ; H01L27/11578 ; H01L27/11529 ; H01L27/1158
Abstract:
Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.
Information query
IPC分类:
