Invention Grant
- Patent Title: Semiconductor devices including staircase structures
-
Application No.: US17152186Application Date: 2021-01-19
-
Publication No.: US11653499B2Publication Date: 2023-05-16
- Inventor: Eric N. Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- The original application number of the division: US16202999 2018.11.28
- Main IPC: H10B43/50
- IPC: H10B43/50 ; H01L23/528 ; H10B41/27 ; H10B43/27 ; H10B41/50 ; H10B41/40 ; H10B43/40 ; H01L21/764 ; H10B41/35 ; H10B43/35 ; H01L27/11575 ; H01L27/11556 ; H01L27/11582 ; H01L27/11548 ; H01L27/11526 ; H01L27/11573 ; H01L27/11524 ; H01L27/1157

Abstract:
A semiconductor device structure comprises stacked tiers each comprising at least one conductive structure and at least one insulating structure longitudinally adjacent the at least one conductive structure, at least one staircase structure having steps comprising lateral ends of the stacked tiers, and at least one opening extending through the stacked tiers and continuously across an entire length of the at least one staircase structure. The at least one conductive structure of each of the stacked tiers extends continuously from at least one of the steps of the at least one staircase structure and around the at least one opening to form at least one continuous conductive path extending completely across each of the stacked tiers. Additional semiconductor device structures, methods of forming semiconductor device structures, and electronic systems are also described.
Public/Granted literature
- US20210143169A1 SEMICONDUCTOR DEVICES INCLUDING STAIRCASE STRUCTURES Public/Granted day:2021-05-13
Information query