Invention Grant
- Patent Title: Memory array contact structures
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Application No.: US17125435Application Date: 2020-12-17
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Publication No.: US11653500B2Publication Date: 2023-05-16
- Inventor: Chih-Yu Chang , Meng-Han Lin , Sai-Hooi Yeong , Bo-Feng Young , Yu-Ming Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; H01L29/78 ; G11C11/22 ; H01L27/11587 ; H01L23/535 ; H01L27/1159 ; H01L29/66
Abstract:
A memory cell includes a transistor including a memory film extending along a word line; a channel layer extending along the memory film, wherein the memory film is between the channel layer and the word line; a source line extending along the memory film, wherein the memory film is between the source line and the word line; a first contact layer on the source line, wherein the first contact layer contacts the channel layer and the memory film; a bit line extending along the memory film, wherein the memory film is between the bit line and the word line; a second contact layer on the bit line, wherein the second contact layer contacts the channel layer and the memory film; and an isolation region between the source line and the bit line.
Public/Granted literature
- US20210408046A1 MEMORY ARRAY CONTACT STRUCTURES Public/Granted day:2021-12-30
Information query
IPC分类:
