Invention Grant
- Patent Title: n-Type 4H—SiC single crystal substrate and method of producing n-type 4H—SiC single crystal substrate
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Application No.: US16553302Application Date: 2019-08-28
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Publication No.: US11655561B2Publication Date: 2023-05-23
- Inventor: Hiromasa Suo , Kazuma Eto , Tomohisa Kato
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP 2018161554 2018.08.30
- Main IPC: C30B29/36
- IPC: C30B29/36 ; C01B32/956 ; C30B23/06
Abstract:
In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×1018/cm3 or more, and a threading dislocation density is less than 4,000/cm2.
Public/Granted literature
- US20200071849A1 n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING n-TYPE 4H-SiC SINGLE CRYSTAL SUBSTRATE Public/Granted day:2020-03-05
Information query
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