Invention Grant
- Patent Title: Transistor characterization
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Application No.: US17217791Application Date: 2021-03-30
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Publication No.: US11656267B2Publication Date: 2023-05-23
- Inventor: Abygael Viey , William Vandendaele , Jacques Cluzel , Jean Coignus
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR 03211 2020.03.31
- Main IPC: G01R31/12
- IPC: G01R31/12 ; G01R31/26 ; G01R31/3177 ; G01R27/02 ; G01R27/26
Abstract:
A method of characterizing a field-effect transistor, including: a step of application, to the transistor gate, of a single voltage ramp; and a step of interpretation both of gate capacitance variations and of drain current variations of the transistor.
Public/Granted literature
- US20210302487A1 TRANSISTOR CHARACTERIZATION Public/Granted day:2021-09-30
Information query
