Invention Grant
- Patent Title: Memory access gate
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Application No.: US17559484Application Date: 2021-12-22
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Publication No.: US11657185B2Publication Date: 2023-05-23
- Inventor: Giuseppe Cariello
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F21/74
- IPC: G06F21/74 ; G06F12/0802 ; G06F12/14 ; G06F21/30 ; G06F21/79 ; G11C5/06 ; G06F13/16 ; G11C16/04

Abstract:
Methods, systems, and devices for a memory access gate are described. A memory device may include a controller, memory dice, and a pad for receiving an externally provided control signal, such as a chip enable signal. The memory device may include a switching component for selecting the externally provided control signal or an internally generated control signal. The controller may provide the selected control signal to a memory die. The memory device may determine whether it is operating in a first mode or a second mode, and select the externally provided control signal or the internally generated control signal based on the determination. The first mode may be a diagnostic mode in some cases. The controller may include a secure register whose value may impact or control the switching. An authenticated host device may direct the controller to write the value to the secure register.
Public/Granted literature
- US20220188466A1 MEMORY ACCESS GATE Public/Granted day:2022-06-16
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