Invention Grant
- Patent Title: Electron-emitting element
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Application No.: US17015561Application Date: 2020-09-09
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Publication No.: US11657997B2Publication Date: 2023-05-23
- Inventor: Shigeya Kimura , Hisashi Yoshida
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 2019204811 2019.11.12
- Main IPC: H01J1/34
- IPC: H01J1/34 ; C01B32/25

Abstract:
According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO3, PbTiO3, Pb(Zrx, Ti1-x)O3, KNbO3, LiNbO3, LiTaO3, NaxWO3, Zn2O3, Ba2NaNb5O5, Pb2KNb5O15, and Li2B4O7.
Public/Granted literature
- US20210142973A1 ELECTRON-EMITTING ELEMENT Public/Granted day:2021-05-13
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