Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16749180Application Date: 2020-01-22
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Publication No.: US11658011B2Publication Date: 2023-05-23
- Inventor: Yoshiharu Inoue , Tetsuo Ono , Michikazu Morimoto , Masaki Fujii , Masakazu Miyaji
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP 11163831 2011.07.27 JP 11211896 2011.09.28 JP 11232446 2011.10.24
- The original application number of the division: US15091730 2016.04.06
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3213 ; H01L21/3065 ; H01L21/66 ; H01L21/67

Abstract:
A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.
Public/Granted literature
- US20200161092A1 PLASMA PROCESSING APPARATUS Public/Granted day:2020-05-21
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