Invention Grant
- Patent Title: Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
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Application No.: US16753678Application Date: 2018-09-04
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Publication No.: US11658071B2Publication Date: 2023-05-23
- Inventor: Naoki Saka
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JP 2017199193 2017.10.13
- International Application: PCT/JP2018/032715 2018.09.04
- International Announcement: WO2019/073719A 2019.04.18
- Date entered country: 2020-04-03
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/088 ; H01L21/786 ; H01L21/8226 ; H01L29/786

Abstract:
To more reliably suppress deterioration in characteristics due to signals (distortions) other than input and output waves while suppressing manufacturing cost. A semiconductor device according to the present disclosure includes a circuit substrate including an insulating film layer located above a predetermined semiconductor substrate and a semiconductor layer located above the insulating film layer, a plurality of passive elements provided on the circuit substrate and electrically connected with one another, and an electromagnetic shield layer locally provided in the insulating film layer corresponding to a portion where at least one of the plurality of passive elements is provided, and the electromagnetic shield layer and the semiconductor substrate are electrically separated from each other.
Public/Granted literature
- US20200294857A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2020-09-17
Information query
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