Invention Grant
- Patent Title: Manufacturing method for semiconductor device including through die hole
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Application No.: US17381169Application Date: 2021-07-20
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Publication No.: US11658097B2Publication Date: 2023-05-23
- Inventor: Chen-Hua Yu , Kuo-Chung Yee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- The original application number of the division: US16413607 2019.05.16
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/31 ; H01L23/00 ; H01L21/768

Abstract:
Curable material layer is coated on surface of first die. First die includes first substrate and first contact pad. Second die is bonded to first die. Second die includes second substrate and second contact pad. Second contact pad is located on second substrate, at an active surface of second die. Bonding the second die to the first die includes disposing second die with the active surface closer to the curable material layer and curing the curable material layer. A through die hole is etched in the second substrate from a backside surface of the second substrate opposite to the active surface. The through die hole further extends through the cured material layer, is encircled by the second contact pad, and exposes the first contact pad. A conductive material is disposed in the through die hole. The conductive material electrically connects the first contact pad to the second contact pad.
Public/Granted literature
- US20210351111A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-11-11
Information query
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