Invention Grant
- Patent Title: Intermediate substrate and fabrication method thereof
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Application No.: US17679245Application Date: 2022-02-24
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Publication No.: US11658104B2Publication Date: 2023-05-23
- Inventor: Shih-Ping Hsu , Chu-Chin Hu , Pao-Hung Chou
- Applicant: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- Applicant Address: TW Hsinchu County
- Assignee: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- Current Assignee: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- Current Assignee Address: TW Hsinchu County
- Agency: Amin, Turocy & Watson, LLP
- Priority: TW 0107729 2021.03.04
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498 ; H05K3/46 ; H05K1/02 ; H05K1/11 ; H05K3/42 ; H01L23/00 ; H01L21/56
Abstract:
An intermediate substrate is provided with a plurality of conductive posts and support members arranged at opposite sides of a coreless circuit structure and insulating layers encapsulating the conductive posts and the support members. Through the arrangement of the support members and the insulating layers, the intermediate substrate can meet the rigidity requirement so as to effectively resist warping and achieve an application of fine-pitch circuits.
Public/Granted literature
- US20220285257A1 INTERMEDIATE SUBSTRATE AND FABRICATION METHOD THEREOF Public/Granted day:2022-09-08
Information query
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