The present disclosure provides a semiconductor device with a copper-manganese liner and a method for forming the semiconductor device. The semiconductor device includes a first electrode and a second electrode disposed in a first dielectric layer. The semiconductor device also includes a first liner separating the first electrode from the first dielectric layer. The semiconductor device further includes a fuse link disposed in the first dielectric layer. The fuse link is disposed between and electrically connected to the first electrode and the second electrode, and the fuse link and the first liner are made of copper-manganese (CuMn).