Invention Grant
- Patent Title: Backside signal interconnection
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Application No.: US17196174Application Date: 2021-03-09
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Publication No.: US11658119B2Publication Date: 2023-05-23
- Inventor: Yu-Xuan Huang , Ching-Wei Tsai , Yi-Hsun Chiu , Yi-Bo Liao , Kuan-Lun Cheng , Wei-Cheng Lin , Wei-An Lai , Ming Chian Tsai , Jiann-Tyng Tzeng , Hou-Yu Chen , Chun-Yuan Chen , Huan-Chieh Su
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L29/78 ; H01L29/06 ; H01L27/088 ; H01L23/522

Abstract:
A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.
Public/Granted literature
- US20220130759A1 BACKSIDE SIGNAL INTERCONNECTION Public/Granted day:2022-04-28
Information query
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