Invention Grant
- Patent Title: Forming recesses in molding compound of wafer to reduce stress
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Application No.: US16884773Application Date: 2020-05-27
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Publication No.: US11658153B2Publication Date: 2023-05-23
- Inventor: Chun-Hung Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L25/065 ; H01L21/56 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L21/784
Abstract:
A chip includes a semiconductor substrate, an electrical connector over the semiconductor substrate, and a molding compound molding a lower part of the electrical connector therein. A top surface of the molding compound is lower than a top end of the electrical connector. A recess extends from the top surface of the molding compound into the molding compound.
Public/Granted literature
- US20200286863A1 Forming Recesses in Molding Compound of Wafer to Reduce Stress Public/Granted day:2020-09-10
Information query
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