Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17006643Application Date: 2020-08-28
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Publication No.: US11658169B2Publication Date: 2023-05-23
- Inventor: Junichi Shibata
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 2020051025 2020.03.23
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L25/00 ; H01L23/00

Abstract:
A semiconductor device has a first substrate including an element region, a peripheral region that surrounds the element region, a first insulator with a first recess portion in the peripheral region, a first metal layer in the element region, and a first conductor in the peripheral region to surround the element region. A second substrate has an element region, a peripheral region that surrounds the element region, a second insulator with a second recess portion that faces the first recess portion, a second metal layer in contact with the first metal layer, and a second conductor that surrounds the element region of the second substrate.
Public/Granted literature
- US20210296299A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
Information query
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