Invention Grant
- Patent Title: Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget
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Application No.: US16688344Application Date: 2019-11-19
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Publication No.: US11658233B2Publication Date: 2023-05-23
- Inventor: Kyoung-Keun Lee
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: WOLFSPEED, INC.
- Current Assignee: WOLFSPEED, INC.
- Current Assignee Address: US NC Durham
- Agency: BakerHostetler
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/205 ; H01L29/40 ; H01L29/47 ; H01L29/423 ; H01L21/02 ; H01L21/285 ; H01L21/311 ; H01L21/765 ; H01L29/66 ; H01L29/20 ; H03F3/21
Abstract:
A device including a substrate, a passivation layer, a source, a gate, a drain, and the gate including at least one step portion. Where the at least one step portion is arranged within the passivation layer, the at least one step portion includes at least one first surface and at least one second surface, where the at least one first surface is connected to the at least one second surface, where the gate includes a third surface, and where the at least one step portion is connected to the third surface. A process is also disclosed.
Public/Granted literature
Information query
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