A magneto-electric (ME) inverter includes two anti-ferromagnetic spin orbit read (AFSOR) circuit elements, each AFSOR circuit element has a CMOS inverter; and an AFSOR device with a ME base layer; a semiconductor channel layer on the ME base layer and comprising a source terminal and a drain terminal, where the source terminal is coupled to an output of the CMOS inverter; and a gate electrode on the semiconductor channel layer. The gate electrode of a second AFSOR device of the two AFSOR circuit elements is coupled to the drain terminal of a first AFSOR device of the two AFSOR circuit elements.