Invention Grant
- Patent Title: Structure and method for MRAM devices having spacer element
-
Application No.: US17247058Application Date: 2020-11-25
-
Publication No.: US11659774B2Publication Date: 2023-05-23
- Inventor: Hsiang-Ku Shen , Dian-Hau Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/02 ; H01F10/32 ; H01L27/22 ; G11C11/16 ; H01L43/12
Abstract:
Methods and devices are provided that include a magnetic tunneling junction (MTJ) element. A first spacer layer abuts sidewalls of the MTJ element. The first spacer layer has a low-dielectric constant (low-k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition.
Public/Granted literature
- US20220165936A1 STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT Public/Granted day:2022-05-26
Information query
IPC分类:
