Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17070341Application Date: 2020-10-14
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Publication No.: US11661333B2Publication Date: 2023-05-30
- Inventor: Wei-Jhih Mao , Shang-Ying Tsai , Kuei-Sung Chang , Chun-Wen Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.
Public/Granted literature
- US20220112074A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-04-14
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