Invention Grant
- Patent Title: MEMS package comprising multi-depth trenches
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Application No.: US17109405Application Date: 2020-12-02
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Publication No.: US11667522B2Publication Date: 2023-06-06
- Inventor: Wen-Chuan Tai , Fan Hu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- The original application number of the division: US16705627 2019.12.06
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00

Abstract:
The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a cap substrate bonded to a device substrate. The cap substrate comprises a MEMS trench, a scribe trench, and an edge trench respectively recessed from at a front-side surface of the cap substrate. A stopper is disposed within the MEMS trench and raised from a bottom surface of the MEMS trench.
Public/Granted literature
- US20210078858A1 METHOD FOR FORMING MULTI-DEPTH MEMS PACKAGE Public/Granted day:2021-03-18
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