The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced. A brand-new method for obtaining high-purity silicon carbide by partially replacing anthracite and quartz sand with cracked coke and silicon dioxide in waste circuit board light plates or epoxy resin cracking residues is adopted, and high-value utilization of waste resources is achieved. The method has the characteristics of simple and feasible process, low manufacturing cost and wide adaptability, and is beneficial to improving the economic benefit and social benefit of enterprise production.