Invention Grant
- Patent Title: Method for manufacturing light emitting element including quantum dot in an emission layer
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Application No.: US17198752Application Date: 2021-03-11
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Publication No.: US11667834B2Publication Date: 2023-06-06
- Inventor: Changhee Lee , Sehun Kim , Hyojin Ko , Dukki Kim , Jaehoon Kim , Hyunmi Doh , Yunku Jung , Jaekook Ha
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR 20200066729 2020.06.02
- Main IPC: H10K50/115
- IPC: H10K50/115 ; H10K71/00 ; C09K11/02 ; H01L51/50 ; H01L51/56 ; B82Y40/00 ; B82Y20/00

Abstract:
A method for manufacturing a light emitting element includes: forming a first electrode; forming a hole transport region on a first electrode; forming an emission layer on the hole transport region; forming an electron transport region on the emission layer; and forming a second electrode on the electron transport region, wherein the forming of the emission layer includes providing a quantum dot composition containing a quantum dot and a ligand bonded to a surface of the quantum dot, to form a preliminary emission layer; and increasing the layer density of the preliminary emission layer by about 5% or greater, thereby improving a luminous efficiency of the light emitting element.
Public/Granted literature
- US20210371732A1 METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT INCLUDING QUANTUM DOT Public/Granted day:2021-12-02
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