Wide band gap semiconductor NAND based neutron detection systems and methods
Abstract:
A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.
Information query
Patent Agency Ranking
0/0