Invention Grant
- Patent Title: Wide band gap semiconductor NAND based neutron detection systems and methods
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Application No.: US17370366Application Date: 2021-07-08
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Publication No.: US11668845B2Publication Date: 2023-06-06
- Inventor: Jeffrey Robert Preston , Ashley C. Stowe
- Applicant: Consolidated Nuclear Security, LLC
- Applicant Address: US TN Oak Ridge
- Assignee: Consolidated Nuclear Security, LLC
- Current Assignee: Consolidated Nuclear Security, LLC
- Current Assignee Address: US TN Oak Ridge
- Agency: Clements Bernard Walker
- Agent Christopher L. Bernard; Christine Wilkes Beninati
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L31/032 ; G01T3/08

Abstract:
A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.
Public/Granted literature
- US20230019822A1 WIDE BAND GAP SEMICONDUCTOR NAND BASED NEUTRON DETECTION SYSTEMS AND METHODS Public/Granted day:2023-01-19
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