Invention Grant
- Patent Title: Template, template manufacturing method, and semiconductor device manufacturing method
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Application No.: US17011020Application Date: 2020-09-03
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Publication No.: US11669011B2Publication Date: 2023-06-06
- Inventor: Jun Watanabe , Anupam Mitra , Kazuya Fukuhara
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 2020048745 2020.03.19
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/20 ; G03F9/00 ; H01L21/027 ; B29C59/02 ; B29C35/08

Abstract:
A template includes: a base material having a surface including a first pattern, a second pattern and a third pattern, the first pattern including a first recess, the second pattern including a second recess. The base material containing a first material having a first refractive index; a first layer disposed in the first recess and containing a second material, the second material having a second refractive index different from the first refractive index; and a second layer disposed in the second recess, containing the second material, and being thicker than the first layer.
Public/Granted literature
- US20210294209A1 TEMPLATE, TEMPLATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2021-09-23
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