Invention Grant
- Patent Title: Maskless lithography method to fabricate topographic substrate
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Application No.: US16798261Application Date: 2020-02-21
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Publication No.: US11669012B2Publication Date: 2023-06-06
- Inventor: Yongan Xu , Ludovic Godet
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/038 ; G03F7/20

Abstract:
In one embodiment, a method of fabricating a device having at least two features of differing heights comprises: depositing a resist over a substrate; determining a topography pattern for the at least two features of the device; determining an exposure pattern for the at least two features of the device; exposing a first area of the resist with a first dose of light, the first area corresponding to a first feature of the at least two features; exposing a second area of the resist with a second dose of light that is different from the first dose of light, the second area corresponding to a second feature of the at least two features; and developing the resist.
Public/Granted literature
- US20210263410A1 MASKLESS LITHOGRAPHY METHOD TO FABRICATE TOPOGRAPHIC SUBSTRATE Public/Granted day:2021-08-26
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