Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a retractable electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being extended or retracted along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion, and the loop end of the radio-frequency matcher is fixed to the bottom of a chamber body. In this way, the height of the lower electrode may be controlled by extension or retraction of the retractable electrically conductive part, such that the distance between the upper and lower plates becomes adjustable; besides, the loop end of the radio-frequency matcher is fixed to the bottom of the chamber body, such that when the retractable electrically conductive part is axially extended or retracted, the movement of the electrically connection portion in the radial direction of the extractable electrically conductive part is reduced, not causing instability of the radio-frequency loop, thereby achieving stability of the radio-frequency loop while achieving adjustability of the plate distance.