Invention Grant
- Patent Title: Die stack structure
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Application No.: US17073415Application Date: 2020-10-19
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Publication No.: US11670621B2Publication Date: 2023-06-06
- Inventor: Jie Chen , Hsien-Wei Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- The original application number of the division: US16252727 2019.01.21
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L21/66 ; H01L21/768 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/498
Abstract:
Provided is a die stack structure including a first die and a second die. The first die and the second die are bonded together through a hybrid bonding structure. A bonding insulating layer of the hybrid bonding structure extends to contact with one interconnect structure of the first die or the second die.
Public/Granted literature
- US20210050331A1 DIE STACK STRUCTURE Public/Granted day:2021-02-18
Information query
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