Invention Grant
- Patent Title: FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage
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Application No.: US17336565Application Date: 2021-06-02
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Publication No.: US11670682B2Publication Date: 2023-06-06
- Inventor: Gilbert Dewey , Matthew V. Metz , Willy Rachmady , Anand S. Murthy , Chandra S. Mohapatra , Tahir Ghani , Sean T. Ma , Jack T. Kavalieros
- Applicant: Tahoe Research, Ltd.
- Applicant Address: IE Dublin
- Assignee: Tahoe Research, Ltd.
- Current Assignee: Tahoe Research, Ltd.
- Current Assignee Address: IE Dublin
- Agency: Studebaker & Brackett PC
- The original application number of the division: US16095287
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/8234
Abstract:
An apparatus is described. The apparatus includes a FINFET device having a channel. The channel is composed of a first semiconductor material that is epitaxially grown on a subfin structure beneath the channel. The subfin structure is composed of a second semiconductor material that is different than the first semiconductor material. The subfin structure is epitaxially grown on a substrate composed of a third semiconductor material that is different than the first and second semiconductor materials. The subfin structure has a doped region to substantially impede leakage currents between the channel and the substrate.
Public/Granted literature
- US20210296180A1 FINFET TRANSISTOR HAVING A DOPED SUBFIN STRUCTURE TO REDUCE CHANNEL TO SUBSTRATE LEAKAGE Public/Granted day:2021-09-23
Information query
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