Invention Grant
- Patent Title: Semiconductor devices with ferroelectric layer and methods of manufacturing thereof
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Application No.: US17460096Application Date: 2021-08-27
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Publication No.: US11670715B2Publication Date: 2023-06-06
- Inventor: Yen-Chieh Huang , Po-Ting Lin , Hai-Ching Chen , Sai-Hooi Yeong , Yu-Ming Lin , Chung-Te Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L27/11597 ; H01L29/49
Abstract:
A semiconductor device is described. The semiconductor device includes a substrate and a metal layer disposed on the substrate. A seed layer is formed on the metal layer. A ferroelectric gate layer is formed on the seed layer. A channel layer is formed over the ferroelectric gate layer. The seed layer is arranged to increase the orthorhombic phase fraction of the ferroelectric gate layer.
Public/Granted literature
- US20230069233A1 SEMICONDUCTOR DEVICES WITH FERROELECTRIC LAYER AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2023-03-02
Information query
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