Invention Grant
- Patent Title: Surface-emitting laser device and method for manufacturing surface-emitting laser device
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Application No.: US17123133Application Date: 2020-12-16
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Publication No.: US11670910B2Publication Date: 2023-06-06
- Inventor: Susumu Noda , Tomoaki Koizumi , Kei Emoto
- Applicant: Kyoto University , Stanley Electric Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: KYOTO UNIVERSITY,STANLEY ELECTRIC CO., LTD.
- Current Assignee: KYOTO UNIVERSITY,STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Kyoto; JP Tokyo
- Agency: Xsensus LLP
- Priority: JP 2019226780 2019.12.16
- Main IPC: H01S5/11
- IPC: H01S5/11 ; H01S5/185 ; H01S5/20 ; H01S5/042 ; H01S5/343 ; H01S5/32

Abstract:
A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
Public/Granted literature
- US20210184431A1 SURFACE-EMITTING LASER DEVICE AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER DEVICE Public/Granted day:2021-06-17
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