Invention Grant
- Patent Title: Light emitting device and method of manufacturing same, and projector
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Application No.: US16758920Application Date: 2018-10-19
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Publication No.: US11670911B2Publication Date: 2023-06-06
- Inventor: Michifumi Nagawa , Shunsuke Ishizawa
- Applicant: Seiko Epson Corporation
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP 2017208551 2017.10.27
- International Application: PCT/JP2018/039049 2018.10.19
- International Announcement: WO2019/082817A 2019.05.02
- Date entered country: 2020-04-24
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/20 ; H01S5/042 ; H01S5/32 ; G03B21/20 ; H01S5/343 ; H01S5/028

Abstract:
A light emitting device is provided that makes it possible to reduce absorption of light by an electrode. The light emitting device includes a substrate, and a laminated structure provided to the substrate, wherein the laminated structure includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the active layer, a recessed part is disposed at an opposite side to the substrate side of the laminated structure, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a depth of the recessed part is no larger than a distance between a surface at an opposite side to the substrate side of the laminated structure and the active layer, and an electrode is disposed at an opposite side to the substrate side of the laminated structure.
Public/Granted literature
- US20200266611A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME, AND PROJECTOR Public/Granted day:2020-08-20
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