Invention Grant
- Patent Title: Memory-type camouflaged logic gate using transistors with different threshold voltages
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Application No.: US17468853Application Date: 2021-09-08
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Publication No.: US11671101B2Publication Date: 2023-06-06
- Inventor: Jae-Mun Oh , Byung-Do Yang , Jung-Ho Kim
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: LRK Patent Law Firm
- Priority: KR 20210042094 2021.03.31
- Main IPC: H03K19/1776
- IPC: H03K19/1776 ; H03K19/17784

Abstract:
Disclosed herein is a memory-type camouflaged logic gate using transistors having different threshold voltages. The camouflaged logic gate may include two or more candidate logic gates, memory, the output signal of which is adjusted based on two or more transistors having different threshold voltages, and a multiplexer for selectively outputting the output of one of the two or more candidate logic gates depending on the output signal of the memory.
Public/Granted literature
- US20220321127A1 MEMORY-TYPE CAMOUFLAGED LOGIC GATE USING TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES Public/Granted day:2022-10-06
Information query
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