Invention Grant
- Patent Title: Manufacturing method of metal structure
-
Application No.: US16953338Application Date: 2020-11-20
-
Publication No.: US11672081B2Publication Date: 2023-06-06
- Inventor: Hsueh-Hsuan Chou , Yi-Hung Lin
- Applicant: InnoLux Corporation
- Applicant Address: TW Miao-Li County
- Assignee: InnoLux Corporation
- Current Assignee: InnoLux Corporation
- Current Assignee Address: TW Miao-Li County
- Agent Winston Hsu
- Priority: CN 2010961983.0 2020.09.14
- Main IPC: H05K3/02
- IPC: H05K3/02 ; H05K3/00

Abstract:
A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.
Public/Granted literature
- US20220087030A1 MANUFACTURING METHOD OF METAL STRUCTURE Public/Granted day:2022-03-17
Information query