Invention Grant
- Patent Title: Ferroelectric semiconductor device and method for producing a memory cell
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Application No.: US17161384Application Date: 2021-01-28
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Publication No.: US11672127B2Publication Date: 2023-06-06
- Inventor: Bernhard Wagner , Simon Fichtner , Fabian Lofink
- Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. , Christian-Albrechts-Universitaet zu Kiel
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee Address: DE Munich
- Agency: Perkins Coie LLP
- Agent Michael A. Glenn
- Priority: DE 2018212736.0 2018.07.31
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/1159 ; H01L21/28 ; H01L29/51
Abstract:
Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.
Public/Granted literature
- US20210151445A1 FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A MEMORY CELL Public/Granted day:2021-05-20
Information query
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