Invention Grant
- Patent Title: Two-terminal reversibly switchable memory device
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Application No.: US17194609Application Date: 2021-03-08
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Publication No.: US11672189B2Publication Date: 2023-06-06
- Inventor: Darrell Rinerson , Christophe J. Chevallier , Wayne Kinney , Roy Lambertson , John E. Sanchez, Jr. , Lawrence Schloss , Philip Swab , Edmond Ward
- Applicant: HEFEI RELIANCE MEMORY LIMITED
- Applicant Address: CN Hefei
- Assignee: Hefei Reliance Memory Limited
- Current Assignee: Hefei Reliance Memory Limited
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- Main IPC: H10N70/20
- IPC: H10N70/20 ; G11C11/56 ; G11C13/00 ; H10N70/00 ; H10B63/00 ; G06F30/30 ; H01L45/00 ; H01L27/24
Abstract:
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.
Public/Granted literature
- US20210193917A1 TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE Public/Granted day:2021-06-24
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