Invention Grant
- Patent Title: Electronic synaptic device and method for manufacturing same
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Application No.: US17315434Application Date: 2021-05-10
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Publication No.: US11672190B2Publication Date: 2023-06-06
- Inventor: Tae Whan Kim , Jeong Woon Lee , Beom Hui Yoo , Si Hyun Sung
- Applicant: Industry-University Cooperation Foundation Hanyang University
- Applicant Address: KR Seoul
- Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
- Current Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200123143 2020.09.23
- Main IPC: H10N70/20
- IPC: H10N70/20 ; H01L45/00

Abstract:
An electronic synaptic device includes: a lower electrode; an upper electrode; and an active layer provided between the lower electrode and the upper electrode and including a plurality of conductive nanoparticles, wherein the conductive nanoparticles are dispersed in a matrix forming a continuous phase, and the matrix is composed of a protein. The electronic synaptic device has a low switching operation voltage, is capable of implementing a transition phenomenon from a short term potentiation state to a long term potentiation state even with a relatively low voltage, and has high stability; and, therefore, can be preferably applied as a memristive device for implementing neuromorphic computing.
Public/Granted literature
- US20220093854A1 ELECTRONIC SYNAPTIC DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-03-24
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