- Patent Title: Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell
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Application No.: US16070094Application Date: 2017-03-23
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Publication No.: US11674217B2Publication Date: 2023-06-13
- Inventor: Junsuke Matsuzaki , Hirohisa Takahashi
- Applicant: ULVAC, INC.
- Applicant Address: JP Chigasaki
- Assignee: ULVAC, INC.
- Current Assignee: ULVAC, INC.
- Current Assignee Address: JP Chigasaki
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Priority: JP 2016066579 2016.03.29
- International Application: PCT/JP2017/011724 2017.03.23
- International Announcement: WO2017/170125A 2017.10.05
- Date entered country: 2018-07-13
- Main IPC: C23C14/56
- IPC: C23C14/56 ; C23C14/18 ; C23C14/50 ; H01J37/32 ; H01J37/34 ; H01L21/67 ; H01L21/677 ; H01L31/18 ; C23C14/34 ; H01L31/0224 ; H01L31/0376 ; H01L31/075 ; H01L31/20
Abstract:
A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.
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