Invention Grant
- Patent Title: Semiconductor device including power failure detection circuit
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Application No.: US17319880Application Date: 2021-05-13
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Publication No.: US11675404B2Publication Date: 2023-06-13
- Inventor: Ryo Mori , Kazuki Fukuoka , Kenichi Shimada
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP 2020090225 2020.05.25
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F1/28

Abstract:
A semiconductor device includes: a plurality of cores configured to receive power from a power supply; a plurality of power switch circuits provided for each core and configured to control the power supplied to the corresponding cores; a compare circuit configured to receive power from the power supply and compare output data of the plurality of cores; and a core voltage monitor circuit configured to monitor a voltage of a node that connects the power supply and the compare circuit.
Public/Granted literature
- US20210365093A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
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