Invention Grant
- Patent Title: Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
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Application No.: US17168536Application Date: 2021-02-05
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Publication No.: US11676831B2Publication Date: 2023-06-13
- Inventor: Hiroaki Imamura , Takahiro Fuji , Yoshihiro Yamaguchi
- Applicant: JSW AKTINA SYSTEM CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: JSW AKTINA SYSTEM CO., LTD
- Current Assignee: JSW AKTINA SYSTEM CO., LTD
- Current Assignee Address: JP Yokohama
- Agency: Potomac Law Group, PLLC
- Priority: JP 17050811 2017.03.16
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; H01L21/683

Abstract:
A laser irradiation apparatus includes a laser generation device, a levitation unit to levitate an object to which the laser light is applied, and a conveyance unit to convey the levitated object. The conveyance unit includes a holding mechanism for holding the object by absorption, and a moving mechanism for moving the holding mechanism in a conveyance direction. The holding mechanism includes a base including a plurality of through holes, a plurality of pipes respectively connected to the through holes, a vacuum generation device configured to evacuate air from the pipes, and a plurality of absorption assistance valves each disposed in the middle of a respective one of the pipes, each of the plurality of absorption assistance valves being configured to be closed when a flow rate of a gas flowing into the pipe through the through hole becomes equal to or higher than a threshold.
Public/Granted literature
- US20210159100A1 LASER IRRADIATION APPARATUS, LASER IRRADIATION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-05-27
Information query
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