Invention Grant
- Patent Title: Semiconductor device and fabrication method for the same
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Application No.: US17511145Application Date: 2021-10-26
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Publication No.: US11676893B2Publication Date: 2023-06-13
- Inventor: Li-Han Lu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- The original application number of the division: US16440376 2019.06.13
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L21/311 ; H01L21/768

Abstract:
A reliable semiconductor device and a method for preparing the reliable semiconductor device are provided. The semiconductor device includes at least one die comprising an integrated circuit region; a first recess region surrounding the integrated circuit region; and a second recess region surrounding the first recess region. A first columnar blocking structure is disposed in the first recess region and a second columnar blocking structure is disposed in the second recess region.
Information query
IPC分类: